Antimony(III) telluride beads,
ANTIMONY (III) TELLURIDE
CAS: 1327-50-0
Molecular Formula: S2Te3
Antimony(III) telluride beads, - Names and Identifiers
| Name | ANTIMONY (III) TELLURIDE |
| Synonyms | ANTIMONY (III) TELLURIDE Antimony sesquitelluride Antimony(III) telluride beads, |
| CAS | 1327-50-0 |
| EINECS | 215-480-9 |
Antimony(III) telluride beads, - Physico-chemical Properties
| Molecular Formula | S2Te3 |
| Molar Mass | 626.32 |
| Density | 6.5 g/mL at 25 °C(lit.) |
| Melting Point | 629°C |
| Boling Point | 1173.8 °C |
| Water Solubility | Insoluble in water. |
| Appearance | Grey powder |
| Storage Condition | Room Temprature |
| MDL | MFCD00016320 |
| Use | The chemical formula Sb2Te3 of antimony telluride is summarized. Molecular weight 626.30. Gray solid. The melting point of 639 deg C, the relative density of 6.5018. Soluble in nitric acid. It is prepared by passing hydrogen telluride into an acidic solution of antimony (III) chloride or by heating a mixture of the elements tellurium and antimony. |
Antimony(III) telluride beads, - Risk and Safety
| Risk Codes | R20/22 - Harmful by inhalation and if swallowed. R51/53 - Toxic to aquatic organisms, may cause long-term adverse effects in the aquatic environment. |
| Safety Description | 61 - Avoid release to the environment. Refer to special instructions / safety data sheets. |
| UN IDs | UN 1549 6.1/PG 3 |
Antimony(III) telluride beads, - Preparation and thermoelectric properties of antimony telluride based Nano thin films
from hownet
Author:
Abstract:
thermoelectric materials are materials for direct conversion of thermal energy and electrical energy, which have important application value and broad application prospects in the fields of thermoelectric power generation and Thermoelectric refrigeration. Sb_2Te_3 based compounds are one of the best thermoelectric materials at room temperature. After decades of research, the thermoelectric figure of merit of bulk Sb_2Te_3 based materials at room temperature has been hovering at about 1. With the development of nanotechnology, the nanocrystallization of thermoelectric materials can increase the scattering of carriers and phonons, so that the decrease of thermal conductivity is more significant than that of electrical conductivity, which is beneficial to improve the thermoelectric performance of materials. In this paper, Sb_2Te_3 based Nano thermoelectric thin films were prepared by magnetron sputtering. The morphology and structure of the thin films were characterized by XRD, SEM and EDS, and the thermoelectric properties of the thin films were systematically studied. In this paper, Sb_2Te_3 thin films were prepared by RF Magnetron Sputtering. The Effects of magnetron sputtering process, such as sputtering power and deposition time, on the morphology and thermoelectric properties of the thin films were explored. It is found that the deposition rate of Sb_2Te_3 thin films increases almost linearly with the increase of sputtering power. With the increase of RF sputtering power, the resistivity of Sb_2Te_3 thin films decreased gradually and the Seebeck coefficient increased first and then decreased. With the increase of sputtering time, the resistivity of the thin film decreases gradually, but the change of Seebeck coefficient is not obvious. The properties of Sb_2Te_3 thin films deposited by RF Magnetron Sputtering at room temperature are poor. After annealing treatment, the grain size of the film grows, the crystallinity is enhanced, and the (1010) plane is preferred. The carrier concentration of Sb_2Te_3 thin films decreases with the increase of annealing temperature and the mobility increases gradually. Further analysis shows that the average free path of carriers in the thin film increases with the increase of annealing temperature, but it is still smaller than the grain size of the thin film. After the annealing conditions were optimized, the power factor of the films was increased from 2.5 μW/cm · K-2 to 18.09 μW/cm · K-2 at room temperature, and the thermoelectric properties were significantly improved. Doping nano-sized particles in the material can increase the scattering of carriers and phonons, which can significantly improve the Seebeck coefficient of the material and reduce the thermal conductivity without significantly increasing the resistivity of the material, therefore, the ternary alloy has higher thermoelectric properties. In this paper, Bi-Sb-Te alloy thin films were prepared by RF Magnetron sputtering. The results show that the alloy films deposited at room temperature are annealed, and the Bi-Sb-Te alloy films are formed by the mutual diffusion and condensation between the atoms. When the annealing temperature is 250, the alloy thin films are preferentially grown in the (00l) direction to form a layered structure. After annealing treatment, the carrier concentration of the alloy film decreases and the mobility increases, the resistivity of the film decreases and the Seebeck coefficient increases. Compared with Sb_2Te_3 thin film, the alloy thin film prepared by co-sputtering at room temperature has poor thermoelectric properties. After annealing, the average free path of the carrier of the alloy film is decreased compared with that of the Sb_2Te_3 film, and the resistivity of the alloy film is increased, but the Seebeck coefficient of the alloy film is significantly higher than that of the Sb_2Te_3 film. When the annealing temperature is 300, the power factor of the Bi-Sb-Te alloy film is 22.54W/cm · K-2. It can be seen that the alloy film doped with the appropriate amount of Bi nanoparticles has better thermoelectric properties and thermal stability than Sb_2Te_3 thin film. The effect of substrate temperature on the morphology and structure of Bi-Sb-Te alloy thin films is significant. When the substrate temperature is 150 ° C., the film forms an alloy film with (1010) phase. Compared with the Bi-Sb-Te alloy films deposited at room temperature, the roughness of the alloy films heated by the substrate is increased, and the resistivity is lower and the Seebeck coefficient is higher. When the annealing temperature is 300 deg C, the substrate temperature is 150 deg C alloy film power factor has the maximum value of 25.32 μW/cm K-2. It can be seen that proper substrate temperature can improve the thermoelectric properties of the thin film.
stowed
Key words:
thermoelectric thin film; Sb_2Te_3; Magnetron sputtering; power factor
degree level:
MSc
DOI:
CNKI:CDMD:2.1014.008038
cited:
Last Update：2024-01-02 23:10:35
Antimony(III) telluride beads, - Wide response spectrum detector based on antimony telluride material and preparation method thereof
from Palm Bridge research
Application (patent) number:
CN201911011670.2
application date:
2019-10-23
Public/Announcement Number:
CN110729365A
Public/announcement date:
2020.01.24
applicant (patent):
Kunming Institute of Physics
inventor:
Tang Libin , Zhang Yuping , Xing Yishan , Zhao Peng , clear
National and provincial code:
CN530102
Abstract:
a wide response spectrum detector based on antimony telluride material and a preparation method thereof relate to the field of photoelectric technology, in particular to a topological insulator material Sb
Last Update：2023-08-16 22:05:47
Antimony(III) telluride beads, - In-situ electron beam-induced crystallization of antimony telluride (Sb2Te3) and silicon doping
from hownet
Author:
Sun Minda , Han Xiaodong , Zhang Xiaona , Zhang Ze , Liu Bo , Song Zhitang , pine forest sealing
Abstract:
Sb_2Te_3 is a basic functional material. On the basis of doping, it mainly uses its thermoelectric characteristics as a new energy source such as solar energy and applies its solid-state phase transition characteristics as a key material for random access memory. Among them, the next generation of pulse-induced phase change random access memory based on CMOS(complementary metal oxide semiconductor) technology needs to find more suitable materials under the background of GeTe-Sb_2Te_3 system. Electrical pulses and electrons in high-speed motion have an approximate role in the material
Key words:
meeting name:
2006 National Conference on electron microscopy
Meeting Time:
2006-08-26
Last Update：2023-08-16 22:05:47
Antimony(III) telluride beads, - Hydrothermal Preparation Method for scandium-doped antimony telluride phase change material
from Palm Bridge research
Application (patent) number:
CN201810392777.5
application date:
2018-04-27
Public/Announcement Number:
CN108502851B
Public/announcement date:
2019.03.12
applicant (patent):
Beijing University of Aeronautics and Astronautics
inventor:
Zhou Jian , Liu Bin , Sun Zhimei , in Yadong , Li Kaiqi
National and provincial code:
CN110108
Abstract:
The invention provides a hydrothermal preparation method of scandium-doped antimony telluride phase change material SC
Last Update：2023-08-16 22:05:47
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