Name | Triethylindium |
Synonyms | Triethylindium triethylindium triethylindigane Triethylindium(III) |
CAS | 923-34-2 |
EINECS | 213-095-0 |
Molecular Formula | C6H15In |
Molar Mass | 202.0013 |
Density | 1.2600 |
Melting Point | -31.9°C |
Boling Point | 184°C |
Appearance | liquid |
Refractive Index | 1.5380 |
UN IDs | 3203 |
Hazard Class | 4.2 |
Packing Group | I |
EPA chemical substance information | information provided by: ofmpeb.epa.gov (external link) |
properties | triethyl indium (C2H5)3In. Molecular weight 202.01. Colorless liquid. Melting Point -32 °c. Boiling point 144 °c. Spontaneous combustion in the air. Soluble in organic solvents. In benzene solution as a monomer. The reaction with cold water generates diethyl indium hydroxide and ethane, and the reaction with hot water at 90 ° C is completely decomposed. |
Application | high purity triethyl indium is a metal organic chemical vapor deposition (referred to as MOCVD), metal-organic molecular beam epitaxy (MOMBE) and other techniques for growing indium sources of semiconductor microstructure materials. In the semiconductor industry, it is deposited on a suitable crystalline substrate alone or with gaseous hydrides of at least one of the elements of the fifth main group (mainly phosphorus and arsenic), it can be made into semiconductor materials with excellent performance. It is widely used in the manufacture of infrared detectors, microwave oscillators, semiconductor light emitting diodes and other core components in the electronic industry. |