12024-14-5
GaTe
CAS: 12024-14-5
Molecular Formula: GaH2Te
12024-14-5 - Names and Identifiers
12024-14-5 - Physico-chemical Properties
| Molecular Formula | GaH2Te |
| Molar Mass | 199.34 |
| Density | 5.440 |
| Melting Point | 824°C |
| Water Solubility | Insoluble in water. |
| Appearance | monoclinic crystals |
| Exposure Limit | ACGIH: TWA 0.1 mg/m3NIOSH: IDLH 25 mg/m3; TWA 0.1 mg/m3 |
| Storage Condition | Room Temprature |
| Sensitive | Moisture Sensitive |
| MDL | MFCD00135536 |
| Physical and Chemical Properties | monoclinic crystals |
| Use | The influence mechanism of cation vacancy on transistor performance in gallium telluride (GaTe), and by suppressing this effect, a high performance phototransistor device is obtained. GaTe is an important III-VI group semiconductor layered compound material with a direct band gap of about 1.7eV, which has great application value in the field of optoelectronic devices, radiation detectors and solar cells. However, due to its complex monoclinic crystal structure and high anisotropy, there are some difficulties in sample preparation and device processing. At present, there is little research on the photoelectric properties of GaTe nanosheets. |
12024-14-5 - Risk and Safety
| Hazard Symbols | Xn - Harmful |
| Risk Codes | R22 - Harmful if swallowed R36/37/38 - Irritating to eyes, respiratory system and skin. |
| Safety Description | S22 - Do not breathe dust. S24/25 - Avoid contact with skin and eyes. |
| TSCA | Yes |
12024-14-5 - Reference Information
| introduction | the influence mechanism of cationic vacancies in gallium telluride (GaTe) on transistor performance, and by suppressing this effect, a high-performance phototransistor device is obtained. GaTe is an important III-VI group semiconductor layered compound material with a direct band gap of about 1.7eV, which is of great application and research value in the fields of optoelectronic devices, radiation detectors and solar cells. However, due to its complex monoclinic crystal structure and high anisotropy of the crystal, there are some difficulties in sample preparation and device processing. At present, there are few researches on the photoelectric properties of GaTe nanosheets. |
| preparation | a preparation method of two-dimensional gallium telluride material is characterized in that the following steps are adopted: step 1. adopts vertical bridgman crystal growth method, and Ga:Te is batched according to the amount ratio of substance of 1:1 to prepare GaTe single crystal. Step 2. in the Michelona Universal2440-750 glove box under Ar atmosphere, select large pieces of GaTe body material with smooth surface light and no wrinkles, and separate them into multiple pieces along the natural cleaving surface. Step 3. in the Mikairona Universal2440-750 glove box under Ar atmosphere, using the high tape from the surface of the bright, less damaged GaTe block material surface to tear away a piece of GaTe thickness of about 6-8μm. Step 4.: In the Michelona Universal2440-750 glove box under Ar atmosphere, the Scotch tape with GaTe sheet is bonded and separated several times until the surface of the tape is no longer bright, and the dense GaTe sheet layer with a thickness of hundreds of nanometers is successfully attached. |
| EPA chemical information | information provided by: ofmpub.epa.gov (external link) |
Last Update：2024-04-10 22:29:15
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