12039-79-1
Tantalum disilicide
CAS: 12039-79-1
Molecular Formula: TaSi2
12039-79-1 - Names and Identifiers
12039-79-1 - Physico-chemical Properties
| Molecular Formula | TaSi2 |
| Molar Mass | 237.12 |
| Density | 9,14 g/cm3 |
| Melting Point | 2200℃ |
| Water Solubility | Insoluble in water. |
| Appearance | Powder |
| Specific Gravity | 9.14 |
| Storage Condition | Room Temprature |
| Sensitive | 1: no significant reaction with aqueous systems |
| MDL | MFCD00049564 |
| Use | Application of tantalum silicide with high melting point, low resistivity, corrosion resistance, high temperature oxidation resistance and good compatibility with silicon, carbon and other matrix materials, as the gate material, the connection circuit of integrated circuit, high temperature oxidation resistant coating, etc., have been widely studied and applied in the electric heating element, high temperature structural components, electronic devices and so on. |
12039-79-1 - Risk and Safety
| Safety Description | 22 - Do not breathe dust. |
| WGK Germany | 3 |
| TSCA | Yes |
12039-79-1 - Nature
| EPA chemical substance information | Tantalum silicide (TaSi2) (12039-79-1) |
Last Update：2024-04-10 22:29:15
12039-79-1 - Uses and methods of synthesis
Overview
metal silicide has similar metal conductivity, high temperature performance, oxidation resistance and compatibility with silicon integrated circuit production process. Transition metal silicides may be used for low resistance gates and linings, Schottky gates, resistive contacts. The preparation methods of tantalum silicide include: Combustion Synthesis (CS) or self-propagating high-temperature synthesis, arc melting, etc. Combustion Synthesis or self-propagating high-temperature synthesis is a method of synthesizing intermetallic compounds using the exothermic heat of element/compound reaction. It has the advantages of simple equipment, low energy consumption, short synthesis time and so on. Its main disadvantages are fast reaction speed, difficult process control, easy to exist impurity phase. Combustion Synthesis of tantalum silicide requires pre-heating to initiate the reaction to achieve synthesis, but a phase other than the disilicide is present. The arc melting method generally requires a long homogenization time, and the loss of silicon due to Volatilization in the melting process may lead to the formation of some impurity phases. Plasma spraying technology because of its jet temperature up to 10000 ℃, jet velocity up to 300-400m/s, set high temperature melting, rapid solidification and near net shape in one, and the technology is not limited by shape or size, easy to realize its short process preparation and forming, gradually developed into a new type of parts forming technology, has been used to prepare some parts. Tantalum silicide powder is prepared by plasma spraying technology into bulk material, which requires high purity tantalum silicide powder as raw material. Therefore, how to obtain a high-purity tantalum silicide (without formation of a heterophase) powder becomes critical.
preparation
TaSi2 powder preparation method includes the following steps: -500 mesh silicon powder and -300 mesh tantalum powder are weighed according to the stoichiometric ratio of tasi2. In order to obtain a high-purity product, it is necessary to select high-purity silicon powder and tantalum powder, for example, with a purity of 99.95 or 99.99%. The selection of -500 mesh silicon powder and -300 mesh tantalum powder is to make the silicon and tantalum mixed evenly, so that the tantalum particles are surrounded by silicon particles, it is advantageous to make the contact reaction between silicon and tantalum easier in the subsequent combustion synthesis step. The stoichiometric ratio was used in order to obtain the TaSi2 phase. In the case where both -200 mesh or -300 mesh silicon powder and tantalum powder are used, it is difficult to obtain a complete single-phase TaSi2 phase powder, and there is always a small amount of Ta5Si3 phase. The use of a raw material powder having a smaller particle size enables the reaction to be more complete, but this increases the oxygen content of the powder, which, on the contrary, hinders the synthesis reaction. The specific steps are as follows: Weighing 500g of -23.6 mesh silicon powder and 300g of -76.4 mesh tantalum powder; Adding 0.5g of NH4Cl powder by weight of silicon powder and tantalum powder; Ball milling the above powder, the ball-to-material ratio is 8:1, and the ball milling time is 12 hours. The Ball milled powder is loaded into a silicon carbide crucible, and the relative density is 40% on the vibration table, after vacuum pumping, argon gas is filled, the temperature is raised to 650 ° C. At 20 ° C. Per minute, and the tantalum silicide synthesis reaction is ignited with tungsten wire. After cooling, the final powder product is obtained by crushing with zirconia balls and cans, all phases were detected as tantalum silicide by XRD.
Last Update：2024-04-10 22:29:15
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Product Name: Tantalum disilicide Visit Supplier Webpage Request for quotation
CAS: 12039-79-1
Tel: 18301782025
Email: 3008007409@qq.com
Mobile: 18021002903
QQ: 3008007409
Wechat: 18301782025
CAS: 12039-79-1
Tel: 18301782025
Email: 3008007409@qq.com
Mobile: 18021002903
QQ: 3008007409
Wechat: 18301782025
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