12056-07-4
indium selenide
CAS: 12056-07-4
Molecular Formula: In2Se3
12056-07-4 - Names and Identifiers
| Name | indium selenide |
| Synonyms | INDIUM SELENIDE indium selenide diindium triselenide INDIUM(III) SELENIDE indiumselenide(in2se3) Indium(III) Selenide, Lump INDIUM(III) SELENIDE, LUMPS |
| CAS | 12056-07-4 |
| EINECS | 235-016-9 |
| InChI | InChI=1/2In.3Se/q2*+3;3*-2 |
12056-07-4 - Physico-chemical Properties
| Molecular Formula | In2Se3 |
| Molar Mass | 466.52 |
| Density | 5.67g/mLat 25°C(lit.) |
| Melting Point | 890°C |
| Water Solubility | Insoluble in water. |
| Appearance | lumps |
| Color | Silver-gray |
| Exposure Limit | ACGIH: TWA 0.1 mg/m3; TWA 0.2 mg/m3NIOSH: IDLH 1 mg/m3; TWA 0.1 mg/m3; TWA 0.2 mg/m3 |
12056-07-4 - Risk and Safety
| Risk Codes | R23/25 - Toxic by inhalation and if swallowed. R33 - Danger of cumulative effects R50/53 - Very toxic to aquatic organisms, may cause long-term adverse effects in the aquatic environment. |
| Safety Description | S20/21 - S28 - After contact with skin, wash immediately with plenty of soap-suds. S45 - In case of accident or if you feel unwell, seek medical advice immediately (show the label whenever possible.) S60 - This material and its container must be disposed of as hazardous waste. S61 - Avoid release to the environment. Refer to special instructions / safety data sheets. |
| UN IDs | UN 3283 6.1/PG 3 |
| WGK Germany | 3 |
| TSCA | Yes |
| Packing Group | III |
12056-07-4 - Reference Information
| EPA chemical substance information | information provided by: ofmpeb.epa.gov (external link) |
| Application | indium selenide is also called indium selenide. Indium selenide is a typical two-dimensional layered semiconductor material with a band gap in the range of 1.24-1.54eV, the specific band gap range depending on the number of layers. Indium selenide thin films have excellent electronic and optical properties. Considerable effort has been devoted to the study of the physical properties of indium selenide. It has been reported that two-dimensional material devices exposed to ambient conditions significantly reduce carrier mobility due to the additional scattering caused by the interface. |
| function | the high-k dielectric can effectively shield the Coulomb impurity scattering (CI) of the two-dimensional field effect transistor. Multilayer indium selenide transistors exhibit high field-effect mobility, and AlO dielectrics can reduce Coulomb scattering. The electrical stability of indium selenide field effect transistors plays a crucial role in practical applications, and the electrical stability is reflected in the hysteresis of the transmission characteristics. |
Last Update：2024-04-09 21:01:54
