Name | Perfluoro(2-methyl-3-pentanone) |
Synonyms | Perfluoro(2-methyl-3-pentanone) PERFLUORO(2-METHYL-3-PENTANONE) HEPTAFLUOROISOPROPYL PENTAFLUOROETHYL KETONE 3-Pentone,1,1,1,2,2,4,5,5,5,-nonafluoro-4-(trifluoromethyl)- 1,1,1,2,2,4,5,5,5-nonafluoro-4-(trifluoromethyl)pentan-3-one 1,1,1,2,2,4,5,5,5-nonafluoro-4-(trifluoromethyl)-3-Pentanone 3-Pentanone, 1,1,1,2,2,4,5,5,5-nonafluoro-4-(trifluoromethyl)- |
CAS | 756-13-8 |
EINECS | 436-710-6 |
InChI | InChI=1/C6F12O/c7-2(4(10,11)12,5(13,14)15)1(19)3(8,9)6(16,17)18 |
Molecular Formula | C6F12O |
Molar Mass | 316.04 |
Density | 1,6 g/cm3 |
Melting Point | -108°C |
Boling Point | 49°C |
Flash Point | 9.1°C |
Water Solubility | 24-332.6mg/L at 25℃ |
Vapor Presure | 31.6-40.4kPa at 20-25℃ |
Appearance | clear liquid |
Specific Gravity | 1.6 |
Color | Colorless to Almost colorless |
Storage Condition | Room Temprature |
Refractive Index | 1.264 |
Physical and Chemical Properties | Perfluorohexanone FK5112 is a new environmentally friendly fire extinguishing agent, which is used to replace Halon, hydrofluorocarbon (HFC) and perfluorinated compounds (PFC). When stored as a liquid, it is discharged in the form of a gas when used, leaving no residue, non-conductive, and helping to protect paper documents and electronic products with preservation value. It has good environmental characteristics, does not destroy the atmospheric ozone layer, GWP value is very low. |
Hazard Symbols | Xi - Irritant |
TSCA | T |
Hazard Class | IRRITANT |
LogP | 2.79-5.48 at 20-25℃ |
EPA chemical substance information | information provided by: ofmpeb.epa.gov (external link) |
Overview | perfluorohexanone is an important alternative to Halon fire extinguishing agents, it is a clear, colorless, odorless liquid that is super-pressurized with nitrogen and stored in high-pressure gas cylinders as part of a fire extinguishing system. |
Application | perfluorohexanone can be used as a wet cleaner for steam reactors and steam reactor components, as well as purging deposits that do not need to accumulate in the gas phase reactor, etching dielectric or metallic materials in the gas phase reactor, and various materials doped in the gas phase reactor. |