Aluminum nitride
Aluminum nitride
CAS: 24304-00-5
Molecular Formula: AlN
Aluminum nitride - Names and Identifiers
| Name | Aluminum nitride |
| Synonyms | AlN ALN B ALN A ALN C ALN AT nitridoaluminum ALUMINUM NITRIDE Aluminum nitride Aluminium nitride Aluminum nitride (AlN) aluminum nitrogen(-3) anion |
| CAS | 24304-00-5 |
| EINECS | 246-140-8 |
| InChI | InChI=1/Al.N/q+3;-3 |
| InChIKey | PIGFYZPCRLYGLF-UHFFFAOYSA-N |
Aluminum nitride - Physico-chemical Properties
| Molecular Formula | AlN |
| Molar Mass | 40.99 |
| Density | 3.26 g/mL at 25 °C (lit.) |
| Melting Point | >2200 °C (lit.) |
| Water Solubility | MAY DECOMPOSE |
| Solubility | Soluble in mineral acids. |
| Vapor Presure | 0Pa at 25℃ |
| Appearance | Offwhite crystalline powder |
| Specific Gravity | 3.26 |
| Color | White to pale yellow |
| Merck | 14,353 |
| Storage Condition | Room Temprature |
| Stability | Stable. |
| Sensitive | Moisture Sensitive |
| MDL | MFCD00003429 |
| Physical and Chemical Properties | Aluminum nitride, covalent bond compounds, atomic crystals, diamond-like nitride, hexagonal, wurtzite type crystal structure, non-toxic, white or off-white. Aluminum nitride (AlN) is a synthetic mineral that does not occur naturally in nature. The crystal structure of AlN is hexagonal wurtzite type, which has the advantages of small density (3.26g/cm3), high strength, good heat resistance (about 3060 C decomposition), high thermal conductivity, corrosion resistance and so on. aluminum nitride (AlN) is stable up to 2200 °c. The strength is high at room temperature, and the strength decreases slowly with the increase of temperature. Good thermal conductivity, thermal expansion coefficient is small, is a good thermal shock material. Resistance to corrosion of molten metal, is an ideal crucible material for casting pure iron, aluminum or aluminum alloy. Aluminum nitride is also an electrical insulator with good dielectric properties and is also promising for use as an electrical component. The aluminum nitride coating on the surface of gallium arsenide protects it from ion implantation during annealing. Aluminum nitride is also a catalyst for the conversion of hexagonal boron nitride to cubic boron nitride. It reacts slowly with water at room temperature. It can be synthesized from aluminum powder in ammonia or nitrogen atmosphere at 800~1000 ℃, and the product is white to gray-blue powder. Or by Al2O3-C-N2 system in 1600~1750 c reaction synthesis, the product is off-white powder. Or aluminum chloride and ammonia by gas phase reaction. The coating can be synthesized by vapor deposition method from AlCl3-NH3 system. AlN 3H2O = = catalyst = = = Al(OH)3 ↓ NH3 |
| Use | Is a good heat shock resistance material, is an ideal crucible material for casting pure iron, aluminum or aluminum alloy |
Aluminum nitride - Risk and Safety
| Risk Codes | R36/37/38 - Irritating to eyes, respiratory system and skin. R34 - Causes burns |
| Safety Description | S26 - In case of contact with eyes, rinse immediately with plenty of water and seek medical advice. S37/39 - Wear suitable gloves and eye/face protection S45 - In case of accident or if you feel unwell, seek medical advice immediately (show the label whenever possible.) S36/37/39 - Wear suitable protective clothing, gloves and eye/face protection. |
| UN IDs | UN3178 |
| WGK Germany | 3 |
| RTECS | BD1055000 |
| TSCA | Yes |
| HS Code | 28500090 |
| Hazard Class | 4.1 |
| Packing Group | II |
Aluminum nitride - Upstream Downstream Industry
| Raw Materials | Nitrogen Carbon nanotubes Aluminum oxide |
Aluminum nitride - Reference
| Reference Show more | 1. Wu, Hao, et al. "Low molecular weight heparin modified bone targeting liposomes for orthotopic osteosarcoma and breast cancer bone metastatic tumors." International Journal of Biological Macromolecules 164 (2020): 2583-2597.https://doi.org/10.1016/j.ijbiom |
Aluminum nitride - Nature
Open Data Verified Data
aluminum nitride belongs to hexagonal system and has a wurtzite-type structure. Pure is blue-white, usually gray or off-white. Relative density 3. 26; Mohs hardness 9; Coefficient of thermal expansion 4. 84 × 10-6 K-1 (25~600 ℃); Thermal conductivity 30. IW/(m.K)(200 °c); Resistivity 2 x ioln,-cm (25 °c); Dielectric constant 8.15. The strength is high at room temperature, and the strength decreases slowly with the increase of temperature. Good thermal conductivity, thermal expansion coefficient is small, is a good thermal shock material. Has excellent thermal shock resistance. The thermal conductivity of AIN is 2~3 times that of A12 03, and the strength of hot pressing is higher than that of A1z Oa. Aluminum nitride has good corrosion resistance to Al and other molten metals, gallium arsenide, etc., particularly excellent corrosion resistance to molten al liquid, and excellent electrical insulation and dielectric properties. However, aluminum nitride has poor high-temperature oxidation resistance, is easy to absorb moisture in the atmosphere, hydrolysis, and moist air, water or aqueous liquid contact to generate heat and nitrogen and rapid decomposition. At 2516 ° C., the thermal hardness is very high, and the deformation is not softened even before the decomposition temperature.
Last Update：2024-01-02 23:10:35
Aluminum nitride - Preparation Method
Open Data Verified Data
ammonia and aluminum were directly subjected to nitridation reaction, and aluminum nitride powder was obtained by pulverization and classification. Alternatively, the aluminum oxide and the carbon are thoroughly mixed and reduced in an electric furnace at 1700 ° C. To obtain aluminum nitride.
Last Update：2022-01-01 09:05:22
Aluminum nitride - Introduction
This product has high purity, small particle size, uniform distribution, large specific surface area, high surface activity, low loose density, and good injection molding performance; used in composite materials, good matching with semiconductor silicon, and interface compatibility Good, can improve the mechanical properties and thermal conductivity of composite materials.
Last Update：2022-10-16 17:15:13
Aluminum nitride - Use
Open Data Verified Data
aluminum nitride ceramic is a new type of ceramic with high technology. Aluminum nitride substrate with high thermal conductivity, non-toxic, corrosion resistance, high temperature resistance, thermal chemical stability and other characteristics, is a large-scale integrated circuit, semiconductor module circuit and high-power devices ideal packaging materials, heat dissipation materials, circuit elements and interconnect carriers. It is also the best additive to improve the thermal conductivity and mechanical properties of polymer materials. Aluminum nitride ceramics can also be used as crucibles for melting non-ferrous metals and semiconductor materials gallium arsenide, thermocouple protection tubes, high temperature insulation, microwave dielectric materials, high temperature resistance, corrosion-resistant structural ceramics and transparent aluminum nitride microwave ceramic products are used as raw materials for the production of high thermal conductivity ceramics and resin fillers. Aluminum nitride is an electrical insulator with good dielectric properties. The aluminum nitride coating on the surface of gallium arsenide protects it from ion implantation during annealing.
Last Update：2022-01-01 09:05:23
Aluminum nitride - Reference Information
| crystal structure | Hexagonal, Wurtzite (Zincite) Structure - Space Group P 63mc |
| LogP | 0 at 25℃ |
| NIST chemical information | Information provided by: webbook.nist.gov (external link) |
| EPA chemical information | Information provided by: ofmpub.epa.gov (external link) |
| Use history | Aluminum nitride was first synthesized in 1877. By the 1980s, aluminum nitride was a ceramic insulator (the polycrystalline material was 70-210W ‧ m − 1 ‧ K − 1, and the single crystal could be as high as 275 W ‧ m − 1 ‧ K − 1 ), so that aluminum nitride has a higher heat transfer ability, so that aluminum nitride is widely used in microelectronics. Unlike beryllium oxide, aluminum nitride is non-toxic. Aluminum nitride is treated with metal, which can replace bauxite and beryllium oxide for a large number of electronic instruments. Aluminum nitride can be prepared by the reduction of alumina and carbon or by direct nitriding of metallic aluminum. Aluminum nitride is a substance connected by covalent bonds. It has a hexagonal crystal structure and has the same shape as zinc sulfide and fibrous zinc ore. The spatial group of this structure is P63mc. Industrial-grade materials can only be manufactured by hot pressing and welding. The substance is very stable in an inert high temperature environment. In the air, when the temperature is higher than 700 ℃, the surface of the substance will be oxidized. At room temperature, 5-10nm thick oxide films can still be detected on the surface of the substance. The oxide film can still protect the substance until 1370 ℃. However, when the temperature is higher than 1370 ℃, a large amount of oxidation will occur. Up to 980 ℃, aluminum nitride is still quite stable in hydrogen and carbon dioxide. Mineral acids dissolve it slowly by invading the boundaries of granular substances, while strong bases dissolve it by invading granular aluminum nitride. The substance will slowly hydrolyze in water. Aluminum nitride can resist the invasion of most melted salts, including chloride and cryolite (ie sodium hexafluoroaluminate) 〕. |
| characteristics | (1) high thermal conductivity (about 320W/m K), close to BeO and SiC, more than 5 times that of Al2O3; (2) coefficient of thermal expansion (4.5 × 10-6 ℃) matches Si(3.5~4 × 10-6 ℃) and GaAs(6 × 10-6 ℃); (3) excellent electrical properties (dielectric constant, dielectric loss, bulk resistivity, dielectric strength); (4) good mechanical properties, flexural strength is higher than Al2O3 and BeO ceramics, can be sintered under normal pressure; (5) high purity; (6) good optical transmission characteristics; (7) non-toxic; (8) can be made by casting process. It is a promising high-power integrated circuit substrate and packaging material. |
| Application | There are reports that most of the current research is developing a semiconductor (gallium nitride or alloy aluminum gallium nitride) based on ultraviolet light-emitting diodes, and the wavelength of light is 250 nanometers. In May 2006, it was reported that an inefficient diode can emit light waves with a wavelength of 210 nanometers [1]. A single aluminum nitride crystal has an energy gap of 6.2eV measured by vacuum ultraviolet reflectivity. Theoretically, the energy gap allows some waves with a wavelength of about 200 nanometers to pass through. But when it is implemented in business, many difficulties need to be overcome. Aluminum nitride is used in optoelectronic engineering, including the use of optical storage interfaces and electronic substrates as induced layers, as wafer carriers under high thermal conductivity, and for military purposes. Due to the characteristics of the piezoelectric effect of aluminum nitride, the extensional extension of aluminum nitride crystals is also used for surface acoustic wave detectors. The detector will be placed on the silicon wafer. There are only very few places where these fine films can be reliably made. The use of aluminum nitride ceramics has high room temperature and high temperature strength, small expansion coefficient, good thermal conductivity characteristics, can be used as high temperature structure heat exchanger materials. aluminum nitride ceramics can resist the corrosion of metals and alloys such as iron and aluminum, and can be used as crucible and casting mold materials for smelting metals such as Al, Cu, Ag and Pb. |
| aluminum nitride ceramic | aluminum nitride ceramic is a new high-tech ceramic. Aluminum nitride substrate has the characteristics of extremely high thermal conductivity, non-toxic, corrosion resistance, high temperature resistance, and good thermochemical stability. It is an ideal packaging material and heat dissipation material for large-scale integrated circuits, semiconductor module circuits and high-power devices, Circuit components and interconnect carrier. It is also the best additive to improve the thermal conductivity and mechanical properties of polymer materials. Aluminum nitride ceramics can also be used as crucibles for smelting non-ferrous metals and semiconductor materials gallium arsenide, protective tubes for thermocouples, high-temperature insulation, microwave dielectric materials, High-temperature, corrosion-resistant structural ceramics and transparent aluminum nitride microwave ceramic products are used as raw materials and resin fillers for the production of high thermal conductivity ceramics. Aluminum nitride is an electrical insulator with good dielectric properties. The aluminum nitride coating on the surface of gallium arsenide can protect it from ion implantation during annealing. |
| preparation process | the preparation process of aluminum nitride powder mainly includes direct nitriding method and carbothermal reduction method, in addition to self-propagating synthesis method, high-energy ball milling method, in-situ self-reaction synthesis method, plasma chemical synthesis method and chemical vapor precipitation method, etc. 1. Direct Nitriding Method The direct nitriding method is to directly combine aluminum powder with nitrogen to form aluminum nitride powder in a high-temperature nitrogen atmosphere. Its chemical reaction formula is 2Al(s) N2(g)→ 2AlN(s), and the reaction temperature is 800 ℃-1200 ℃. Its advantages are simple process, low cost, suitable for industrial mass production. The disadvantage is that there are nitrides on the surface of aluminum powder, resulting in nitrogen impermeability and low conversion rate; the reaction speed is fast, and the reaction process is difficult to control; the heat released by the reaction will cause the powder to self-sintering and form agglomeration, which makes the powder The particles are coarsened, and the later need for ball milling and crushing will be mixed with impurities. 2. Carbothermal reduction method Carbothermal reduction method is to heat uniformly mixed Al2O3 and C in N2 atmosphere. First, Al2O3 is reduced, and the obtained product Al reacts with N2 to generate AlN. Its chemical reaction formula is: Al2O3(s) 3C(s) N2(g)→ 2AlN(s) 3CO(g). Its advantages are rich raw materials and simple process. The powder has high purity, small particle size and uniform distribution. The disadvantage is that the synthesis time is long, the nitriding temperature is high, and the excess carbon needs to be removed after the reaction, resulting in higher production costs. 3. High-energy ball milling method High-energy ball milling method refers to the use of the rotation or vibration of the ball mill under the atmosphere of nitrogen or ammonia, so that the hard ball can strongly impact, grind and stir the raw materials such as alumina or aluminum powder, so as to directly Nitride to form aluminum nitride powder method. Its advantages are: high-energy ball milling method has the advantages of simple equipment, short process flow and high production efficiency. The disadvantage is that nitriding is difficult to complete, and impurities are easily introduced during the ball milling process, resulting in low quality of the powder. 4. High-temperature self-propagating synthesis method High-temperature self-propagating synthesis method is a derivative method of direct nitriding method. It uses the heat generated by the reaction of Al and N2 to automatically maintain the reaction until the reaction is complete. The chemical reaction formula is: 2Al(s) N2(g)→ 2AlN(s) Its advantage is that the essence of the high-temperature self-propagating synthesis method is the same as that of the direct nitriding method of aluminum powder, but the method does not need to nitriding the Al powder at high temperature, only needs to be ignited at the beginning, so it has low energy consumption, high production efficiency and low cost. Its disadvantage is that in order to obtain completely nitrided powder, it must be carried out under higher nitrogen pressure, which directly affects the industrial production of this method. 5. In-situ self-reaction synthesis method The principle of in-situ self-reaction synthesis method is basically similar to the principle of direct nitriding method. The alloy formed by aluminum and other metals is used as raw material. The other metals in the alloy are first melted out at high temperature and reacted with nitrogen to form metal nitride, and then metal Al replaces the nitride metal to produce AlN. Its advantages are simple process, rich raw materials, low reaction temperature, low oxygen impurity content of synthetic powder. Its disadvantage is that metal impurities are difficult to separate, resulting in low insulation performance. 6. Plasma chemical synthesis The plasma chemical synthesis method uses a DC arc plasma generator or a high-frequency plasma generator to transport Al powder to the plasma flame area. In the high-temperature flame area, the powder immediately melts and volatilizes, and quickly combines with nitrogen ions to form AlN powder. Its advantages are less agglomeration and small particle size. The disadvantage is that the method is an unsteady reaction, can only be processed in small batches, it is difficult to realize industrial production, and its oxygen content is high, the required equipment is complex and the reaction is incomplete. 7. Chemical vapor precipitation method is much higher than the theoretical reaction temperature, so that the reaction product vapor forms a high supersaturated vapor pressure, causing it to automatically condense into a crystal nucleus, and then polymerize into particles. |
| use | aluminum nitride is a good thermal shock material and an ideal crucible material for casting pure iron, aluminum or aluminum alloy. Good thermal conductivity, small thermal expansion coefficient, is a good thermal shock material. It has strong resistance to molten metal corrosion and is an ideal crucible material for melting and casting pure iron, aluminum and aluminum alloys. The applications are as follows: 1. Thermal conductive silica gel and thermal conductive epoxy resin ultra-high thermal conductive nano-composite silica gel have good thermal conductivity, good electrical insulation, wide electrical insulation and service temperature (working temperature -60 ℃ -200 ℃), low consistency and good construction performance. Products have reached or exceeded imported products, because they can replace similar imported products and are widely used in heat transfer media of electronic devices to improve work efficiency. Such as the CPU and heat sink gap, high-power triode, thyristor components, diodes, and the heat transfer medium at the slit in contact with the substrate. Nano thermal paste is to fill the gap between IC or triode and heat sink, increase the contact area between them, and achieve better heat dissipation effect. 2. Nano-inorganic ceramic automotive lubricating oil and anti-wear agent The nano-aluminum nitride ceramic particles in the nano-ceramic engine oil act on the metal surface of the friction pair inside the engine with the lubricating oil, and are activated under the action of high temperature and extreme pressure, and firmly Infiltrate into the dents and micropores on the metal surface to repair the damaged surface and form a nano-ceramic protective film. Because of the isolation effect of this layer of film, the friction generated by the relative movement between the parts only acts on this layer of protective film. Nano ceramic particles, like small balls, transform part of the friction between the friction pairs from traditional sliding friction to rolling friction, thus greatly reducing the friction force, reducing the friction between the moving parts to nearly zero, and exerting super anti-wear effect on the engine |
Last Update：2024-04-10 22:43:14
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Tel: 86+027-83389957
Email: 1024042217@qq.com
Mobile: 86+18627766980
QQ: 1024042217
Wechat: 18627766980
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Product Name: Aluminum nitride Visit Supplier Webpage Request for quotationCAS: 24304-00-5
Tel: 18301782025
Email: 3008007409@qq.com
Mobile: 18021002903
QQ: 3008007409
Wechat: 18301782025
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