Name | Diethylsilane |
Synonyms | (C2H5)2SiH2 3-Silapentane diethyl-silan DIETHYLSILANE Diethylsilane diethylsilicon Silane, diethyl- Diethylsilanealso high purity |
CAS | 542-91-6 |
EINECS | 208-834-9 |
InChI | InChI=1/C4H10Si/c1-3-5-4-2/h3-4H2,1-2H3 |
Molecular Formula | C4H12Si |
Molar Mass | 88.22 |
Density | 0.681 g/mL at 25 °C (lit.) |
Melting Point | -132°C |
Boling Point | 56 °C (lit.) |
Flash Point | −20°F |
Solubility | Miscible with terahydrofuran, diethyl ether, 1,4-dioxane and benzene. |
Vapor Presure | 279mmHg at 25°C |
Appearance | liquid |
Specific Gravity | 0.683 |
Merck | 14,3128 |
BRN | 1730902 |
Storage Condition | under inert gas (nitrogen or Argon) at 2-8°C |
Sensitive | Air Sensitive |
Refractive Index | n20/D 1.391(lit.) |
MDL | MFCD00039877 |
Hazard Symbols | F - Flammable |
Risk Codes | 11 - Highly Flammable |
Safety Description | S16 - Keep away from sources of ignition. S23 - Do not breathe vapour. S24/25 - Avoid contact with skin and eyes. |
UN IDs | UN 1993 3/PG 2 |
WGK Germany | 1 |
TSCA | Yes |
Hazard Class | 3 |
Packing Group | II |
EPA chemical information | Information provided by: ofmpub.epa.gov (external link) |
Introduction | Diethylsilane is used as a silicon source for depositing metal silicate films. A method of forming a metal silicate as a high-k dielectric in an electronic device includes the steps of: providing a diethylsilane to a reaction zone; simultaneously providing an oxygen source to the reaction zone; simultaneously providing a metal precursor to the reaction zone; reacting the diethylsilane, the oxygen source, and the metal precursor by chemical vapor deposition to form a metal silicate on a substrate including the electronic device. The metal is preferably hafnium, zirconium or mixtures thereof. The dielectric constant of the metal silicate film can be adjusted based on the relative atomic concentrations of the metal, silicon, and oxygen in the film. |
Use | Diethylsilane is a silane reagent, and it has been reported in the literature that it can be used to prepare a silicon source for depositing metal silicate films. |