indiganylidynearsane
indium arsenide
CAS: 1303-11-3
Molecular Formula: AsIn
indiganylidynearsane - Names and Identifiers
indiganylidynearsane - Physico-chemical Properties
| Molecular Formula | AsIn |
| Molar Mass | 189.74 |
| Density | 5.69 g/cm3 |
| Melting Point | 936°C |
| Water Solubility | Insoluble in water. |
| Appearance | 1.5 To 9.5mm Polycrystalline Pieces |
| Color | Gray |
| Exposure Limit | ACGIH: TWA 0.01 mg/m3; TWA 0.1 mg/m3NIOSH: IDLH 5 mg/m3; TWA 0.1 mg/m3; Ceiling 0.002 mg/m3 |
| Merck | 14,4949 |
| Refractive Index | 3.51 |
indiganylidynearsane - Risk and Safety
| UN IDs | UN1557 |
| TSCA | Yes |
| Hazard Class | 6.1 |
| Packing Group | III |
indiganylidynearsane - Reference Information
| application | indium arsenide is a semiconductor material that is difficult to purify. Indium arsenide nanorings were prepared by using indium arsenide-indium aluminum arsenic stack points and an indium arsenide thermal photovoltaic cell with barrier layer structure was prepared. |
| preparation | an efficient method for preparing high-purity indium arsenide. this method adopts a vapor deposition method to heat indium trichloride and arsenic trichloride respectively in a volatilization chamber under the protection of argon to volatilize into steam, and spray it into the reaction chamber through a nozzle to react, and vapor deposition to generate indium arsenide crystals; The specific steps are as follows: (1) using argon as protective gas, indium trichloride and arsenic trichloride are taken in a molar mass ratio of 1:1~1.5:1, respectively, in the first volatilization chamber 1 and the second volatilization chamber 2, volatilization at 300~900 ℃ for 0.5h ~ 12h, so that both materials are in a steam state; (2) Indium trichloride and arsenic trichloride vapor in the two volatilization chambers are sprayed into a titanium-made reaction chamber 3 through the first nozzle 4 and the second nozzle 5, respectively, and reacted at 300-900 ℃ for 2-5h to obtain sediment by vapor deposition; the remaining volatile gas is pressurized to 600-700kPa at room temperature or cooled to -34 ℃ at normal pressure to obtain liquid chlorine; (3) the obtained deposit is heated to volatilize for 2h ~ 12h, the heating temperature is 300~900 ℃, the pressure is 0.5 ~ 100KPa, the residual chlorine is removed, and the residual chlorine is cooled to obtain orange crystal indium arsenide with purity greater than 99.9%. The first volatilization chamber 1 and the second volatilization chamber 2 may use a prior art metal heating volatilization equipment, such as a side-blown electric furnace, and a nozzle of the reaction chamber is connected to the air eye of the electric furnace. The reaction chamber can also use an electric heating furnace to obtain deposits by vapor deposition; the remaining volatile gas is led out of the reaction chamber, pressurized to 600 ~ 700kPa at normal temperature or cooled to -34 ℃ at normal pressure to obtain liquid chlorine. |
| Use | Used as electronic, optical materials, catalysts, etc. |
| Production method | The synthesis of indium arsenide is the same as gallium arsenide, and a double-tube electric furnace is also used. First, a quartz disc filled with indium is fed into a quartz ampoule closed at one end, and then arsenic is added, and the vacuum is sealed at 5 × 10-6Torr(1Torr = 133.322Pa). Heat the indium part of this ampoule to 955 ℃ and the arsenic part to 560 ℃. At this time, the vapor pressure of arsenic is about 33kPa. Arsenic reacts with indium heated to 955°C in the vapor state to form InAs. After 5~6h, the ampoule was taken out of furnace a. InAs single crystals are generated from the front end of the disk. |
| EPA chemical information | Information provided by: ofmpub.epa.gov (external link) |
Last Update：2024-04-10 22:29:15
Supplier List
Spot supply
Product Name: indium arsenide Request for quotationCAS: 1303-11-3
Tel: 86+027-83389957
Email: 1024042217@qq.com
Mobile: 86+18627766980
QQ: 1024042217
Wechat: 18627766980
Spot supply
Product Name: indium arsenide Request for quotationCAS: 1303-11-3
Tel: 86+027-83389957
Email: 1024042217@qq.com
Mobile: 86+18627766980
QQ: 1024042217
Wechat: 18627766980
View History